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BLM2008E

BELLING
Part Number BLM2008E
Manufacturer BELLING
Description N-Channel Enhancement Mode Power MOSFET
Published Feb 25, 2016
Detailed Description Pb Free Product BLM2008E N-Channel Enhancement Mode Power MOSFET Description The BLM2008E uses advanced trench technolo...
Datasheet PDF File BLM2008E PDF File

BLM2008E
BLM2008E

Overview
Pb Free Product BLM2008E N-Channel Enhancement Mode Power MOSFET Description The BLM2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications .
It is ESD protested.
General Features ● VDS = 20V,ID =6A Typ.
RDS(ON) = 17m Ω @ VGS=4.
5V Typ.
RDS(ON) = 22mΩ @ VGS=2.
5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Application ●PWM application ●Load switch TSSOP-8 top view Package Marking And Ordering Information Device Marking De...


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