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13003BDG

Unisonic Technologies
Part Number 13003BDG
Manufacturer Unisonic Technologies
Description NPN SILICON TRANSISTOR
Published Feb 25, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 13003BDG Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW F...
Datasheet PDF File 13003BDG PDF File

13003BDG
13003BDG

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 13003BDG Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc.
The UTC 13003BDG is suitable for electronic ballast power switch circuit and the compact electronic energy-saving light.
„ FEATURES * High collector-base breakdown voltage * Low reverse leakage current * High reliability „ EQUIVALENT CIRCUIT C B E „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003BDGL-TM3-T 13003BDGP-TM3-T 13003BDGL-T60-F-K 13003BDGP-T60-F-K 13003BDGL-T92-F-B 13003BDGP-T92-F-B 13003BDGL-T92-F-K 13003BDGP-T92-F-K Note: Pin Assignment: B: Base C: Collector E: Emitter Package TO-251 TO-126 TO-92 TO-92 Pin Assignment 123 BCE BCE BCE BCE Packing Tube Bulk Tape Box Bulk 13003BDGL-T60-F-B (1)Packing Type (2)Pin Assignment (1) T: Tube, B: Bluk, K: Bulk (2) refer to Pin Assignment (3)Package Type (4)Lead Free (3) TM3: TO-251, T60: TO-126, T92: TO-92 (4) L: Lead Free, P: Halogen Free www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 4 QW-R223-017.
c 13003BDG „ MARKING PACKAGE TO-251 TO-126 TO-92 Preliminary NPN SILICON TRANSISTOR MARKING UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 4 QW-R223-017.
c 13003BDG Preliminary NPN SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 800 450 V V Emitter-Base Voltage Continuous Collector Current VEBO IC 9 1.
5 V A TO-251 10 W Power Dissipation (TC=25°C) TO-126 PD 20 W TO-92 1W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanen...


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