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3PN0402

Infineon
Part Number 3PN0402
Manufacturer Infineon
Description Power-Transistor
Published Feb 25, 2016
Detailed Description OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...
Datasheet PDF File 3PN0402 PDF File

3PN0402
3PN0402

Overview
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Product Summary V DS R DS(on),max (SMD version) ID 40 V 2.
0 mΩ 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N04S3-02 IPI120N04S3-02 IPP120N04S3-02 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN0402 3PN0402 3PN0402 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80 A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 120 120 480 1880 ±20 300 -55 .
.
.
+175 55/175/56 Unit A mJ V W °C Rev.
1.
0 page 1 2007-04-30 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 0.
5 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=230 µA I DSS V DS=40 V, V GS=0 V, T j=25 °C I GSS RDS(on) V DS=40 V, V GS=0 V, T j=125 °C2) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version 40 2.
1 - - 3.
0 - 1.
65 1.
35 -V 4.
0 1 µA 100 100 nA 2.
3 mΩ 2 Rev.
1.
0 page 2 2007-04-30 Parameter Symbol IPB120N04S3-02 IPI120N04S3-02, IPP120N04S...


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