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phmb800b12

Nihon Inter Electronics
Part Number phmb800b12
Manufacturer Nihon Inter Electronics
Description IGBT
Published Feb 26, 2016
Detailed Description IGBT Module-Single □ : CIRCUIT (E) 4 (G) 3 (E) 2 (C) 1 800 A,1200V QS043-401M0056 (2/4) PHMB800B12 □ : OUT...
Datasheet PDF File phmb800b12 PDF File

phmb800b12
phmb800b12


Overview
IGBT Module-Single □ : CIRCUIT (E) 4 (G) 3 (E) 2 (C) 1 800 A,1200V QS043-401M0056 (2/4) PHMB800B12 □ : OUTLINE DRAWING 110 93 ± 0.
25 4 4 - Ø6.
5 2 -M8 1 2 20 20 62 ±0.
2 5 80 3 2 -M4 13 21 29 +1.
036 - 0.
5 +1.
025.
5 - 0.
5 7 23 LABEL Dimension:[mm] □ : MAXIMUM RATINGS (TC=25℃) Item Symbol コレクタ・エミッタ Collector-Emitter Voltage VCES ゲ ー ト・エ ミ ッ タ Gate-Emitter Voltage VGES コレク Collector コレク Collector タ Current タ Power Dissipation DC 1ms IC ICP PC Rated Value 1,200 ±20 800 1,600 3,400 Unit V V A W Junction Temperature Range Tj -40~+150 ℃ Storage Temperature Range Tstg -40~+125 ℃ (Terminal to Base AC,1minute) Isolation Voltage め け ト ル ク Module Base to Heatsink Mounting Torque Busbar to Main Terminal VISO Ftor M4 M8 2,500 3(30.
6) 1.
4(14.
3) 10.
5(107) V(RMS) N・m (kgf・cm) □ : ELECTRICAL CHARACTERISTICS (TC=25℃) Characteristic コレクタ Collector-Emitter Cut-Off Current ゲートれ Gate-Emitter Leakage Current Symbol Test Condition ICES VCE= 1200V,VGE= 0V IGES VGE= ±20V,VCE= 0V Min.
- Typ.
- Max.
Unit 16 mA - - 1.
0 μA コレクタ・エミッタ Collector-Emitter Saturation Voltage VCE(sat) IC= 800A,VGE= 15V - 1.
9 2.
4 V ゲ ー ト しきい Gate-Emitter Threshold Voltage VGE(th) VCE= 5V,IC= 800mA 4-8V Input Capacitance スイッチング Switching Time ターンオン ターンオフ Rise Time Turn-on Time Fall Time Turn-off Time Cies tr ton tf toff VCE= 10V,VGE= 0V,f= 1MHZ VCC= 600V RL= 0.
75Ω RG= 0.
5Ω VGE= ±15V - 66,000 - pF - 0.
25 0.
45 - 0.
40 0.
70 μs - 0.
25 0.
35 - 0.
80 1.
10 □フリーホイーリングダイオードの : FREE WHEELING DIODE RATINGS & CHARACTERISTICS(TC=25℃) Forward Current Item DC 1ms Symbol IF IFM Rated Value 800 1,600 Unit A Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr □ : THERMAL CHARACTERISTICS Characteristic IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition IF= 800A,VGE= 0V IF= 800A,VGE= -10V di/dt= 1600A/μs Test Condition Junction to Case Min.
- Typ.
1.
9 Max.
Unit 2.
4 V - 0.
25 0...



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