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CHT4403N1PT

CHENMKO
Part Number CHT4403N1PT
Manufacturer CHENMKO
Description General Purpose Transistor
Published Feb 26, 2016
Detailed Description CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT General Purpose Transistor VOLTAGE 40 Volts CURRENT 600 mAmpere CHT4403N1PT A...
Datasheet PDF File CHT4403N1PT PDF File

CHT4403N1PT
CHT4403N1PT

Overview
CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT General Purpose Transistor VOLTAGE 40 Volts CURRENT 600 mAmpere CHT4403N1PT APPLICATION * AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE * Small surface mounting type.
(FBPT-923) * High current gain.
* Low colloector-emitter saturation.
* High saturation current capability.
CONSTRUCTION * PNP transistors in one package.
FBPT-923 0.
5±0.
05 1.
0±0.
05 0.
37(REF.
) 0.
25(REF.
) 0.
05±0.
04 0.
42±0.
05 1.
0±0.
05 0.
68±0.
05 CIRCUIT (1) B C (3) E (2) 0.
3±0.
05 Dimensions in millimeters 0.
26±0.
05 FBPT-923 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC Ptot collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation open emitter open base open collector Tamb ≤ 25 °C; note 2 Tstg Tj Tamb storage temperature junction temperature operating ambient temperature Note 2.
Transistor mounted on an FR4 printed-circuit board.
MIN.
− − − − − −65 − −65 MAX.
-40 -40 -5 -600 100 +150 150 +150 UNIT V V V mA mW °C °C °C 2006-07 RATING CHARACTERISTIC CURVES ( CHT4403N1PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciped.
SYMBOL PARAMETER V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage V(BR)EBO emitter-base breakdown voltage ICEX collector cut-off current IBL base cut-off current hFE DC current gain VCEsat collector-emitter saturation VBEsat Ccb Ceb hie hre hfe hoe fT td tr ts tf base-emitter saturation voltage output capacitance input capacitance input impedance voltage feedback ratio small signal current gain output impedance transition frequency delay time rise time storage time fall time CONDITIONS MIN.
IC = -100uA ; IE = 0A IC = -1mA ; IB = 0A IE = -100uA ; IC = 0A VEB(OFF) = -0.
4V ; VCE = -35 V VEB(OFF) = -0.
4V ; VCE = -35 V IC = -100uA; VCE = -1V IC = -1 mA; VCE = -1V IC = -10 mA; VC...


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