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PJP4NA70

Pan Jit International
Part Number PJP4NA70
Manufacturer Pan Jit International
Description 700V N-Channel MOSFET
Published Feb 27, 2016
Detailed Description PPJU4NA70 / PJD4NA70 / PJP4NA70 / PJF4NA70 700V N-Channel MOSFET Voltage 700 V Current 4A Features  RDS(ON), VGS@...
Datasheet PDF File PJP4NA70 PDF File

PJP4NA70
PJP4NA70

Overview
PPJU4NA70 / PJD4NA70 / PJP4NA70 / PJF4NA70 700V N-Channel MOSFET Voltage 700 V Current 4A Features  RDS(ON), VGS@10V,ID@2A<2.
8Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
 (Halogen Free) Mechanical Data ITO-220AB-F TO-220AB TO-252AA TO-251AA  Case: TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AA Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-252AA Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-220AB Approx.
Weight : 0.
067 ounces, 1.
89 grams  ITO-220AB-F Approx.
Weight : 0.
068 ounces, 2 grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AA Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS PD TJ,TSTG 77 0.
62 Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA 1.
62 110 TO-220AB ITO-220AB-F TO-252AA UNITS 700 V +30 V 4A 16 A 242 mJ 100 33 77 W 0.
8 0.
26 0.
62 W/ oC -55~150 oC 1.
25 3.
79 1.
62 oC/W 62.
5 120 110  Limited only By Maximum Junction Temperature March 10,2014-REV.
00 Page 1 PPJU4NA70 / PJD4NA70 / PJP4NA70 / PJF4NA70 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic (Note 4) BVDSS VGS(th) RDS(on) IDSS IGSS VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VGS=10V,ID=2A VDS=700V,VGS=0V VGS=+30V,VDS=0V IS=4A,VGS=0V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capaci...


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