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PJP2NA90

Pan Jit International
Part Number PJP2NA90
Manufacturer Pan Jit International
Description 900V N-Channel MOSFET
Published Feb 27, 2016
Detailed Description PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90 900V N-Channel MOSFET Voltage 900 V Current 2A Features  RDS(ON), VGS@...
Datasheet PDF File PJP2NA90 PDF File

PJP2NA90
PJP2NA90

Overview
PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90 900V N-Channel MOSFET Voltage 900 V Current 2A Features  RDS(ON), VGS@10V,ID@1A<6.
4Ω  High switching speed  Improved dv/dt capability  Low Gate Charge  Low reverse transfer capacitance  Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data ITO-220AB-F TO-220AB  Case : TO-251AB ,TO-220AB, ITO-220AB-F, TO-252 Package  Terminals : Solderable per MIL-STD-750, Method 2026  TO-251AB Approx.
Weight : 0.
0104 ounces, 0.
297grams  TO-220AB Approx.
Weight : 0.
0667 ounces, 1.
89 grams  ITO-220AB-F Approx.
Weight : 0.
068 ounces, 2 grams  TO-252 Approx.
Weight : 0.
0104 ounces, 0.
297grams Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER SYMBOL TO-251AB TO-220AB ITO-220AB-F TO-252 UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy (Note 1) Power Dissipation TC=25oC Derate above 25oC Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS PD TJ,TSTG 50 0.
4 900 +30 2 8 148 80 0.
64 39 0.
31 -55~150 V V A A mJ 50 W 0.
4 W/ oC oC Typical Thermal resistance - Junction to Case - Junction to Ambient RθJC RθJA 2.
5 110 1.
56 62.
5 3.
21 120 2.
5 oC/W 110  Limited only By Maximum Junction Temperature April 24,2015-REV.
00 Page 1 PPJU2NA90 / PJP2NA90 / PJF2NA90 / PJD2NA90 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward ...


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