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SI3483DV

Vishay
Part Number SI3483DV
Manufacturer Vishay
Description P-Channel 30-V (D-S) MOSFET
Published Feb 29, 2016
Detailed Description P-Channel 30-V (D-S) MOSFET Si3483DV Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.035 @ VGS = −10 V −30 0...
Datasheet PDF File SI3483DV PDF File

SI3483DV
SI3483DV

Overview
P-Channel 30-V (D-S) MOSFET Si3483DV Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
035 @ VGS = −10 V −30 0.
053 @ VGS = −4.
5 V ID (A) −6.
2 −5.
0 FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Load Switch 3 mm TSOP-6 Top View 16 25 34 2.
85 mm Ordering Information: Si3483DV-T1—E3 (Lead Free) (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage Gate-Source Voltage VDS −30 VGS "20 Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg −6.
2 −4.
7 −4.
9 −3.
7 −25 −1.
7 −0.
95 2.
0 1.
14 1.
3 0.
73 −55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a.
Surface Mounted on 1” x 1” FR4 Board.
D...


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