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CHT4033XPT

CHENMKO
Part Number CHT4033XPT
Manufacturer CHENMKO
Description PNP SILICON Transistor
Published Feb 29, 2016
Detailed Description CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 80 Volts CURRENT 1 Ampere CHT4033XPT APPLICATI...
Datasheet PDF File CHT4033XPT PDF File

CHT4033XPT
CHT4033XPT

Overview
CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 80 Volts CURRENT 1 Ampere CHT4033XPT APPLICATION * Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE * Small flat package.
(SC-62/SOT-89) * Suitable for high packing density.
* High saturation current capability.
* Voltage controlled small signal switch.
CONSTRUCTION * PNP SILICON Transistor 4.
6MAX.
1.
7MAX.
SC-62/SOT-89 1.
6MAX.
0.
4+0.
05 0.
8MIN.
2.
5+0.
1 4.
6MAX.
+0.
08 0.
45-0.
05 +0.
08 0.
40-0.
05 1.
50+0.
1 +0.
08 0.
40-0.
05 1.
50+0.
1 CIRCUIT 12 1 Base 3 2 Collector ( Heat Sink ) 3 Emitter 123 BC E Dimensions in millimeters SC-62/SOT-89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Tj Tamb junction temperature operating ambient temperature Note 1.
Transistor mounted on an FR4 printed-circuit board.
MIN.
− − − − − − −65 − −65 MAX.
80 80 5.
0 1.
0 1.
5 1.
2 +150 150 +150 UNIT V V V A A W °C °C °C 2004-7 RATING CHARACTERISTIC CURVES ( CHT4033XPT ) THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Note 1.
Transistor mounted on an FR4 printed-circuit board.
CONDITIONS note 1 CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed.
SYMBOL ICBO IEBO PARAMETER collector cut-off current emitter cut-off current hFE DC current gain CONDITIONS IE = 0; VCB = 60 V IC = 0; VEB = 5 V IC = 0.
1 mA; V CE = 5V IC = 100 mA; VCE = 5V IC = 500 mA; VCE =5V IC = 1.
0A; VCE = 5V VALUE 357 UNIT K/W MIN.
− − 75 100 70 25 MAX.
50 10 − 300 − − UNIT nA nA VCEsat VBEsat Cob C ib fT collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance IC = 150 mA...


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