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SQ3457EV

Vishay
Part Number SQ3457EV
Manufacturer Vishay
Description Automotive P-Channel MOSFET
Published Feb 29, 2016
Detailed Description www.vishay.com SQ3457EV Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on...
Datasheet PDF File SQ3457EV PDF File

SQ3457EV
SQ3457EV

Overview
www.
vishay.
com SQ3457EV Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.
5 V ID (A) Configuration TSOP-6 Top V iew - 30 0.
065 0.
100 - 6.
8 Single (4) S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 3 mm 16 25 (3) G 34 2.
85 mm Marking Code: 8Ixxx ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free (1, 2, 5, 6) D P-Channel MOSFET TSOP-6 SQ3457EV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 30 ± 20 - 6.
8 - 3.
9 - 6.
3 - 27 - 14 10 5 1.
7 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a.
Package limited.
b.
Pulse test; pulse width  300 μs, duty cycle  2 %.
c.
When mounted on 1" square PCB (FR-4 material).
d.
Parametric verification ongoing.
PCB Mountc SYMBOL RthJA RthJF LIMIT 110 30 UNIT °C/W S11-2124-Rev.
B, 07-Nov-11 1 Document Number: 66715 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ3457EV Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward...


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