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SQ3481EV

Vishay
Part Number SQ3481EV
Manufacturer Vishay
Description Automotive P-Channel MOSFET
Published Feb 29, 2016
Detailed Description www.vishay.com SQ3481EV Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on...
Datasheet PDF File SQ3481EV PDF File

SQ3481EV
SQ3481EV

Overview
www.
vishay.
com SQ3481EV Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.
5 V ID (A) Configuration TSOP-6 Top V iew - 30 0.
043 0.
070 - 7.
5 Single (4) S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 3 mm 16 25 (3) G 34 2.
85 mm Marking Code: 8Exxx ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free (1, 2, 5, 6) D P-Channel MOSFET TSOP-6 SQ3481EV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 30 ± 20 - 7.
5 - 4.
3 - 5.
2 - 30 - 15 11 4 1.
3 - 55 to + 175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a.
Pulse test; pulse width  300 μs, duty cycle  2 %.
b.
When mounted on 1" square PCB (FR-4 material).
c.
Parametric verification ongoing.
PCB Mountb SYMBOL RthJA RthJF LIMIT 110 36 UNIT °C/W S11-2124-Rev.
B, 07-Nov-11 1 Document Number: 71508 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ3481EV Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb Dynamicb VDS VGS(...


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