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SQ4182EY

Vishay
Part Number SQ4182EY
Manufacturer Vishay
Description Automotive N-Channel MOSFET
Published Feb 29, 2016
Detailed Description www.vishay.com SQ4182EY Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on...
Datasheet PDF File SQ4182EY PDF File

SQ4182EY
SQ4182EY

Overview
www.
vishay.
com SQ4182EY Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.
5 V ID (A) Configuration Package SO-8 Single D D5 D6 D7 8 30 0.
0038 0.
0050 32 Single SO-8 FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 D G 4 3G 2S 1S S Top View N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) TC = 25 °C a TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 30 ± 20 32 18 6.
4 100 60 180 7.
1 2.
3 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a.
Package limited b.
Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c.
When mounted on 1" square PCB (FR4 material).
PCB Mount c SYMBOL RthJA RthJF LIMIT 80 21 UNIT V A mJ W °C UNIT °C/W S15-2402--Rev.
C, 12-Oct-15 1 Document Number: 67917 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ4182EY Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA VDS =...


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