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KF3N60F

KEC
Part Number KF3N60F
Manufacturer KEC
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Mar 1, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA KF3N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P This planar...
Datasheet PDF File KF3N60F PDF File

KF3N60F
KF3N60F


Overview
SEMICONDUCTOR TECHNICAL DATA KF3N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF3N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.
3 Qg(typ) = 8.
5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF3N60P KF3N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 3 3* 1.
9 1.
9* 7 7* 120 3.
2 4.
5 Drain Power Dissipation Tc=25 Derate above 25 PD 73 0.
58 31 0.
25 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Jun...



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