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SQD97N06-6m3L

Vishay
Part Number SQD97N06-6m3L
Manufacturer Vishay
Description Automotive N-Channel MOSFET
Published Mar 3, 2016
Detailed Description www.vishay.com SQD97N06-6m3L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) R...
Datasheet PDF File SQD97N06-6m3L PDF File

SQD97N06-6m3L
SQD97N06-6m3L


Overview
www.
vishay.
com SQD97N06-6m3L Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.
5 V ID (A) Configuration TO-252 60 0.
0063 0.
0069 97 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 D GDS Top View Drain Connected to Tab G N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD97N06-6m3L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 60 ± 20 97 56 100 290 45 101 136 45 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a.
Package limited.
b.
Pulse test; pulse width  300 μs, duty cycle  2 %.
c.
When mounted on 1" square PCB (FR-4 material).
d.
Parametric verification ongoing.
PCB Mountc SYMBOL RthJA RthJC LIMIT 50 1.
1 UNIT V A mJ W °C UNIT °C/W S13-2237-Rev.
A, 28-Oct-13 1 Document Number: 62897 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQD97N06-6m3L Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA Gate-Source Threshold Voltage Gate-Source Leakage VGS(th)...


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