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SQM40N10-30

Vishay
Part Number SQM40N10-30
Manufacturer Vishay
Description Automotive N-Channel MOSFET
Published Mar 3, 2016
Detailed Description www.vishay.com SQM40N10-30 Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RD...
Datasheet PDF File SQM40N10-30 PDF File

SQM40N10-30
SQM40N10-30

Overview
www.
vishay.
com SQM40N10-30 Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 6 V ID (A) Configuration Package TO-263 100 0.
030 0.
034 40 Single TO-263 D FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 G Top View S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.
1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 100 ± 20 40 22 60 155 40 80 107 35 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a.
Package limited.
b.
Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c.
When mounted on 1" square PCB (FR4 material).
d.
Parametric verification ongoing.
PCB Mount c SYMBOL RthJA RthJC LIMIT 40 1.
4 UNIT V A mJ W °C UNIT °C/W S15-1873-Rev.
D, 10-Aug-15 1 Document Number: 64716 For technical questions, contact: automos.
techsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQM40N10-30 Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductancea Dynamic b VDS VGS(th) IGSS IDSS...


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