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SQM40N15-38

Vishay
Part Number SQM40N15-38
Manufacturer Vishay
Description Automotive N-Channel MOSFET
Published Mar 3, 2016
Detailed Description www.vishay.com SQM40N15-38 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RD...
Datasheet PDF File SQM40N15-38 PDF File

SQM40N15-38
SQM40N15-38

Overview
www.
vishay.
com SQM40N15-38 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6 V ID (A) Configuration TO-263 150 0.
038 0.
040 40 Single D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC G G DS Top View ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free S N-Channel MOSFET TO-263 SQM40N15-38-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 150 ± 20 40 23 100 80 40 80 166 55 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a.
Package limited.
b.
Pulse test; pulse width  300 μs, duty cycle  2 %.
c.
When mounted on 1" square PCB (FR-4 material).
d.
Parametric verification ongoing.
PCB Mountc SYMBOL RthJA RthJC LIMIT 40 0.
9 UNIT V A mJ W °C UNIT °C/W S11-2035-Rev.
C, 17-Oct-11 1 Document Number: 65269 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQM40N15-38 Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA Gate-Source Threshold Voltage Gate-Source Leakage VGS(th) IGSS VDS = VGS, ID = 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = 150 V Zero Gate Voltage Dra...


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