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nb10hsa08

Nihon Inter Electronics
Part Number nb10hsa08
Manufacturer Nihon Inter Electronics
Description Diode
Published Mar 3, 2016
Detailed Description 10A Avg. 80Volts NB10HSA08 Schottky Barrier Diode DSE-13051(1/2) :ショットキーバリアダイオード(SBD) Construction : Schottky Barrier...
Datasheet PDF File nb10hsa08 PDF File

nb10hsa08
nb10hsa08


Overview
10A Avg.
80Volts NB10HSA08 Schottky Barrier Diode DSE-13051(1/2) :ショットキーバリアダイオード(SBD) Construction : Schottky Barrier Diode : Application : High-Frequency Rectification SMD Tj=150℃ Feature Small SMD Lower Thermal-Resistance High Current Capability Tj=150℃ OUTLINE DRAWING Package : NB Dimension : mm ■ Weight : 0.
06g(typ.
) ■ Flammability : Epoxy Resin=UL94V-0 Recognized ■ (き Ta=25℃) Absolute Maximum Ratings (Ta = 25 oC unless otherwise stated) Item Symbol Conditions Rating くりしピーク Repetitive Peak Reverse Voltage VRRM - 80 Average Rectified Output Current 50Hz Tl=91℃,VRM=40V IO *1 50H Full Sine Wave, (Tl:Lead Temperature) Ta=29℃ *2 Resistive Load VRM=40V 10 3.
0 RMS Forward Current IF(RMS) - 11.
1 サージ Surge Forward Current 50Hz 1 サイクル りし IFSM 50Hz Full Sine Wave,1 cycle,Non-repetitive 120 Operation Junction Temperature Range Tjw - -40~+150 Storage Temperature Range Tstg - -40~+150 Units V A A A ℃ ℃ ■・ Electrical / Thermal Characteristics Item Symbol Conditions min.
ピーク Peak Reverse Current IRM VRM=VRRM,Tj=25℃, Per diode - ピーク Peak Forward Voltage VFM IFM=5.
0A,Tj=25℃,Per diode - Junction Capacitance Cj f=100kHz,VR=10V,Per diode Thermal Resistance Rth(j-l) Rth(j-a) ・リード Junction to Lead ・ Junction to Ambient *2(ガラエポ) - *1 : カソードコモンによる/Common Cathode Operation *2 : プリント /Glass-Epoxy Substrate Mounted (Soldering Land=2.
0*1.
5mm,2.
0*3.
5mm,Both Sides) typ.
- - 135 - - max.
100 0.
7 - 7 60 Units µA V pF ℃/W ℃/W ● のはなどのためなくすることがあります。 ● The content specified herein is subject to change without notice.
Date of issue:2013.
9.
25 NB10HSA08 ■ Characteristics Diagrams ■ DSE-13051(2/2) Date of issue:2013.
9.
25 ...



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