DatasheetsPDF.com

CHA5356-QGG

United Monolithic Semiconductors
Part Number CHA5356-QGG
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave
Published Mar 4, 2016
Detailed Description CHA5356-QGG UMS A366878A YYWWG 17.7-23.6GHz Packaged HPA GaAs Monolithic Microwave IC in SMD leadless package Descrip...
Datasheet PDF File CHA5356-QGG PDF File

CHA5356-QGG
CHA5356-QGG

Overview
CHA5356-QGG UMS A366878A YYWWG 17.
7-23.
6GHz Packaged HPA GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.
15µm gate length.
It is supplied in RoHS compliant SMD package.
UUMUMSMSS AAA3536356866687878AA YYYYWYWWWWWGG SMU A786863A GWWYY Output power (dBm) UMS A368687A YYWWG Main Features ■ Broadband performances: 17.
7-23.
6GHz 35 Saturated power ■ 33dBm Pout in saturation UMS■38dBmOIP3 ■ 19dB Gain ■ 30dB power detection dynamic ■ DC bias: Vd=6.
0Volt@Id=700mA ■ QGG-QFN5x5 ■ MSL3 34 33 32 31 30 -40 °C 25 °C 85 °C 29 28 17 18 19 20 21 22 23 24 Frequency (GHz) Main Electrical Characteristics Tamb.
= +25°C Symbol Freq Gain Psat OIP3 Parameter Frequency range Linear Gain Saturated Output Power Outpu...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)