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CHR2299-99F

United Monolithic Semiconductors
Part Number CHR2299-99F
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave
Published Mar 4, 2016
Detailed Description CHR2299-99F RoHS COMPLIANT 40-44GHz Down converter GaAs Monolithic Microwave IC Description The CHR2299-99F is a down...
Datasheet PDF File CHR2299-99F PDF File

CHR2299-99F
CHR2299-99F

Overview
CHR2299-99F RoHS COMPLIANT 40-44GHz Down converter GaAs Monolithic Microwave IC Description The CHR2299-99F is a down converter multifunction chip, which integrates LO X4 multiplier, a balanced cold FET mixer and a RF LNA.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a power pHEMT process, 0.
15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
IF_I IF_Q It is available in chip form.
4LO_OUT LO_IN X4 RF_IN Conversion Gain (dB) GM G3 GX DX DA Main Features ■ 40-44GHz RF bandwidth ■ 21dB conversion gain ■ x4 LO frequency multiplier ■ x4 LO output port ■ > 12dB image rejection ■ DC bias: Vd = 4V @ Id = 240mA ■ Chip size 3.
97x2.
25x0.
1mm 30 28 26 24 22 20 18 16 14 12 10 39 supradyne infradyne 40 41 42 43 44 RF_frequency (GHz) 45 Main Characteristics Tamb.
= +25°C Symbol Parameter F_RF RF frequency range F_LO LO frequency range F_IF IF frequency range Gc Conversion gain Min Typ Max Unit 40 44 GHz 9.
5 11.
5 GHz DC 2.
0 GHz 21 dB Ref.
: DSCHR22992012 - 19 Jan 12 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Bat.
Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.
: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHR2299-99F 40-44GHz Down converter Electrical Characteristics Tamb.
= +25°C Symbol Parameter F_RF RF frequency range Min Typ Max Unit 40 44 GHz F_LO LO frequency range 9.
5 11.
5 GHz F_IF IF frequency range DC 2.
0 GHz Gc Conversion gain 21 dB Im rej Image rejection 12 dB P_LO LO Input power 0 dBm NF Noise figure for IF>0.
1GHz 4.
5 dB IMD3 RL_RF Intermodulation level at Pin2tones = -30dBm RF Return Loss 45 dBc 6 dB RL_LO LO Return Loss 12 dB P_4FLO Output power at 4LO_OUT port -1 dBm 4xFLO_Lk 4xFLO leakage on RF port -38 dBm DX, DA LO multiplier, buffer and LNA biasing 4V GM Mixer gate biasing -0.
6...


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