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PESD36VS1UL

NXP
Part Number PESD36VS1UL
Manufacturer NXP
Description Unidirectional ESD protection diode
Published Mar 5, 2016
Detailed Description PESD36VS1UL Unidirectional ESD protection diode Rev. 1 — 5 March 2012 Product data sheet 1. Product profile 1.1 Gener...
Datasheet PDF File PESD36VS1UL PDF File

PESD36VS1UL
PESD36VS1UL

Overview
PESD36VS1UL Unidirectional ESD protection diode Rev.
1 — 5 March 2012 Product data sheet 1.
Product profile 1.
1 General description Unidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and other transients.
1.
2 Features and benefits  ESD protection of one line  Ultra small SMD plastic package  AEC-Q101 qualified  ESD protection up to 30 kV  IEC 61000-4-5; (surge); IPPM = 2.
5 A  Rated peak pulse power: PPPM = 150 W  Ultra low leakage current: IRM < 1 nA 1.
3 Applications  Computers and peripherals  Audio and video equipment  Cellular handsets and accessories  Portable electronics  Communication systems 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage - - 36 V Cd diode capacitance f = 1 MHz; VR = 0 V - - 30 pF 2.
Pinning information Table 2.
Pin 1 2 Pinning Description cathode anode [1] The marking bar indicates the cathode.
Simplified outline [1] 12 Transparent top view Graphic symbol 12 sym035 NXP Semiconductors PESD36VS1UL Unidirectional ESD protection diode 3.
Ordering information Table 3.
Ordering information Type number Package Name Description Version PESD36VS1UL - leadless ultra small plastic package; 2 terminals; SOD882 body 1.
0  0.
6  0.
5 mm 4.
Marking Table 4.
Marking codes Type number PESD36VS1UL Marking code TC 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min PPPM IPPM Tj Tamb Tstg rated peak pulse power rated peak pulse current junction temperature ambient temperature storage temperature tp = 8/20 s tp = 8/20 s [1][2] [1][2] - 55 65 Max 150 2.
5 150 +150 +150 Unit W A C C C [1] Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform ...


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