DatasheetsPDF.com

BLL6H1214P2S-250

NXP
Part Number BLL6H1214P2S-250
Manufacturer NXP
Description LDMOS L-band radar power module
Published Mar 5, 2016
Detailed Description BLL6H1214P2S-250 LDMOS L-band radar power module Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 Ge...
Datasheet PDF File BLL6H1214P2S-250 PDF File

BLL6H1214P2S-250
BLL6H1214P2S-250

Overview
BLL6H1214P2S-250 LDMOS L-band radar power module Rev.
1 — 12 August 2014 Product data sheet 1.
Product profile 1.
1 General description 250 W LDMOS power module intended for L-band radar applications in the frequency range from 1.
2 GHz to 1.
4 GHz.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 1.
8 ms;  = 30 %; IDq = 200 mA; Pi = 26 dBm; in a class-AB production test circuit.
Test signal f (MHz) VDS PL (V) (W) Gp add tr tf (dB) (%) (ns) (ns) pulsed RF 1195 to 1405 45 190 to 290 27 48 15 5 1.
2 Features and benefits  Input/output 50  matched  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (1.
2 GHz to 1.
4 GHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  L-band radar applications in the frequency range 1.
2 GHz to 1.
4 GHz NXP Semiconductors 2.
Pinning information 2.
1 Pinning BL...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)