DatasheetsPDF.com

PJS6415AE

Part Number	PJS6415AE
Manufacturer	Pan Jit International
Description	P-Channel MOSFET
Published	Mar 6, 2016
Detailed Description	PPJS6415AE 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -4.9A SOT-23 6L-1 Features ...
Datasheet	PJS6415AE PDF File

Overview

PPJS6415AE 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -4.
9A SOT-23 6L-1 Features  RDS(ON) , VGS@-10V, ID@-4.
9A<60mΩ  RDS(ON) , VGS@-4.
5V, ID@-4.
2A<70mΩ  RDS(ON) , VGS@-2.
5V, ID@-3.
1A<96mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  ESD Protected 2KV HBM  Lead free in comply with EU RoHS 2011/65/EU directives.
 Green molding compound as per IEC61249 Std.
(Halogen Free) Mechanical Data  Case: SOT-23 6L-1 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx.
Weight: 0.
0003 ounces, 0.
0084 grams  Marking: S5E Unit : inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +12 -4.
9 -19.
6 2 16 -55~150 62.
5 UNITS V V A A W mW/ oC oC oC/W April 29,2015-REV.
01 Page 1 PPJS6415AE Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current SYMBOL BVDSS VGS(th) RDS(on) IDSS IGSS Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS TEST CONDITION VGS=0V, ID=-250uA VDS=VGS, ID=-250uA VGS=-10V, ID=-4.
9A VGS=-4.
5V, ID=-4.
2A VGS=-2.
5V, ID=-3.
1A VGS=-1.
8V, ID=-0.
5A VDS=-20V, VGS=0V VGS=+8V, VDS=0V VDS=-10V, ID=-4.
9A, VGS=-4.
5V (Note 1,2) VDS=-10V, VGS=0V, f=1.
0MHZ VDD=-10V, ID...

Similar Datasheet

PJS6415AE P-Channel MOSFET - Pan Jit International

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)