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BLP25M710

NXP
Part Number BLP25M710
Manufacturer NXP
Description Broadband LDMOS driver transistor
Published Mar 7, 2016
Detailed Description BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General...
Datasheet PDF File BLP25M710 PDF File

BLP25M710
BLP25M710

Overview
BLP25M710 Broadband LDMOS driver transistor Rev.
1 — 29 August 2013 Product data sheet 1.
Product profile 1.
1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band.
Table 1.
Application information Test signal f (MHz) IDq (mA) VDS PL Gp (V) (W) (dB) DVB-T 858 110 28 1 20.
9 Pulsed RF [3] 2450 80 28 10 16.
2 D (%) 17.
1 64.
5 IMDshldr (dBc) 47.
5 [1] - PAR (dB) 9.
5 [2] - [1] Measured [dBc] with delta marker at 4.
3 MHz from center frequency.
[2] PAR (of output signal) at 0.
01 % probability on CCDF; PAR of input signal = 9.
5 dB at 0.
01 % probability on CCDF.
[3] Measured at  = 10 %, tp = 12 s.
1.
2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLP25M710 Broadband LDMOS driver transistor 2.
Pinning information Table 2.
Pinning Pin Description 1, 6, 7, 12 n.
c.
2, 3 gate1 4, 5 gate2 8, 9 drain2 10, 11 drain1 13 source [1] Connected to flange.
3.
Ordering information Simplified outline Graphic symbol     [1] 7UDQVSDUHQWWRSYLHZ     DDD Table 3.
Ordering information Type number Package Name Description Version BLP25M710 HVSON12 plastic thermal enhanced very thin small outline SOT1179-2 package; no leads; 12 terminals; body 6  4  0.
85 mm 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature Min Max Unit - 65 V 0.
5 +13 V 65 +150 C - 150 C BLP25M710 Product data sheet All information provi...


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