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BLP8G21S-160PV

NXP
Part Number BLP8G21S-160PV
Manufacturer NXP
Description Power LDMOS transistor
Published Mar 7, 2016
Detailed Description BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General descript...
Datasheet PDF File BLP8G21S-160PV PDF File

BLP8G21S-160PV
BLP8G21S-160PV

Overview
BLP8G21S-160PV Power LDMOS transistor Rev.
3 — 1 July 2014 Product data sheet 1.
Product profile 1.
1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.
Table 1.
Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1880 to 1920 600 28 20 17.
5 31 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing = 5 MHz.
1.
2 Features and benefits  Designed for broadband operation (1880 MHz to 2025 MHz)  De...


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