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BLS7G2730LS-200P

Part Number	BLS7G2730LS-200P
Manufacturer	NXP
Description	LDMOS S-band radar power transistor
Published	Mar 7, 2016
Detailed Description	BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Product data sheet 1. Prod...
Datasheet	BLS7G2730LS-200P PDF File

Overview

BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev.
3 — 12 July 2013 Product data sheet 1.
Product profile 1.
1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C.
Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.
7 to 3.
0 32 Application circuit pulsed RF [2] 2.
7 to 3.
0 32 pulsed RF [3] 2.
9 to 3.
1 32 [1] tp = 300 s;  = 10 %; IDq = 100 mA [2] tp = 3000 s;  = 20 %; IDq = 50 mA [3] tp = 500 s;  = 20 %; IDq = 50 mA PL Gp (W) (dB) 200 12 220 12.
5 220 12.
5 D tr (%) (ns) 48 8 ...

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