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BLS8G2731L-400P

NXP
Part Number BLS8G2731L-400P
Manufacturer NXP
Description LDMOS S-band radar power transistor
Published Mar 7, 2016
Detailed Description BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev. 1 — 26 May 2015 Product data sheet 1. Produ...
Datasheet PDF File BLS8G2731L-400P PDF File

BLS8G2731L-400P
BLS8G2731L-400P

Overview
BLS8G2731L-400P; BLS8G2731LS-400P LDMOS S-band radar power transistor Rev.
1 — 26 May 2015 Product data sheet 1.
Product profile 1.
1 General description 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.
7 GHz to 3.
1 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit.
Test signal f (GHz) VDS (V) PL(1dB) (W) Gp [1] (dB) D [1] (%) PL(2dB) (W) Gp [2] (dB) D [2] (%) pulsed RF 2.
7 to 2.
9 32 540 11 45 610 10 46 2.
9 to 3.
1 32 490 12 47 550 11 49 2.
7 to 3.
1 32 530 12 45 590 11 47 [1] at 1 dB gain compression.
[2] at 2 dB gain compression.
1.
2 Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band operation  Excellent thermal stability  Easy power control  Integrated dual sided ESD protection enables excellent off-state isolation  High flexibility with respect to pulse formats  Internally matched for ease of use ...


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