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IRHY597230CM

Part Number	IRHY597230CM
Manufacturer	International Rectifier
Description	RADIATION HARDENED POWER MOSFET
Published	Mar 7, 2016
Detailed Description	PD - 94319B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) ID...
Datasheet	IRHY597230CM PDF File

Overview

PD - 94319B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) ID IRHY597230CM 100K Rads (Si) 0.
515Ω -8.
0A IRHY593230CM 300K Rads (Si) 0.
515Ω -8.
0A IRHY597230CM 200V, P-CHANNEL 4# TECHNOLOGY c International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
T0-257AA Features: n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current ➀ PD @ TC = 25°C Max.
Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ TJ TSTG Operating Junction Storage Temperature Range Lead Temperature Weight Pre-Irradiation Units -8.
0 -5.
0 A -32 75 W 0.
6 W/°C ±20 V 80 mJ -8.
0 A 7.
5 mJ -12 V/ns -55 to 150 oC 300 (0.
063in/1.
6mm from case for 10s ) 4.
3 ( Typical ) g For footnotes refer to the last page www.
irf.
com 1 01/30/03 IRHY597230CM Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State...

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IRHY597230CM RADIATION HARDENED POWER MOSFET - International Rectifier

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