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IRHYB67134CM

International Rectifier
Part Number IRHYB67134CM
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET
Published Mar 7, 2016
Detailed Description PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level RD...
Datasheet PDF File IRHYB67134CM PDF File

IRHYB67134CM
IRHYB67134CM

Overview
PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.
09Ω IRHYB63134CM 300K Rads (Si) 0.
09Ω ID 19A 19A IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications.
These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic TO-257AA (Tab-less) Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max.
Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight Pre-Irradiation Units 19 12 A 76 75 W 0.
6 W/°C ±20 V 67 mJ 19 A 7.
5 mJ 7.
8 -55 to 150 V/ns oC 300 (0.
063 in.
/1.
6 mm from case for 10s) 3.
7 (Typical) g For footnotes refer to the last page www.
irf.
com 1 05/09/05 IRHYB67134CM Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltag...


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