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JANSR2N7519T3

International Rectifier
Part Number JANSR2N7519T3
Manufacturer International Rectifier
Description 30V P-Channel MOSFET
Published Mar 7, 2016
Detailed Description PD-96899C IRHYS597Z30CM JANSR2N7519T3 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary P...
Datasheet PDF File JANSR2N7519T3 PDF File

JANSR2N7519T3
JANSR2N7519T3

Overview
PD-96899C IRHYS597Z30CM JANSR2N7519T3 RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) Product Summary Part Number Radiation Level IRHYS597Z30CM 100 kRads(Si) IRHYS593Z30CM 300 kRads(Si) RDS(on) 0.
072 0.
072 ID -20A* -20A* QPL Part Number JANSR2N7519T3 JANSF2N7519T3 30V, P-CHANNEL REF: MIL-PRF-19500/732 R5 TECHNOLOGY Low-Ohmic TO-257AA Description IR HiRel R5 technology provides high performance power MOSFETs for space applications.
These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applicati...


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