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2N7588T3

International Rectifier
Part Number 2N7588T3
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET
Published Mar 7, 2016
Detailed Description PD-96986A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) 2N7588T3 IRHYS67130CM 100V, N-CHANNEL TECHNOL...
Datasheet PDF File 2N7588T3 PDF File

2N7588T3
2N7588T3

Overview
PD-96986A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) 2N7588T3 IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) IRHYS63130CM 300K Rads (Si) RDS(on) 0.
042Ω 0.
042Ω ID 20A* 20A* International Rectifier’s R6TM technology provides superior power MOSFETs for space applications.
These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic TO-257AA Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hard...


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