DatasheetsPDF.com

IRG8P50N120KD-EPbF

International Rectifier
Part Number IRG8P50N120KD-EPbF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 8, 2016
Detailed Description   VCES = 1200V IC = 50A, TC =100°C IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast...
Datasheet PDF File IRG8P50N120KD-EPbF PDF File

IRG8P50N120KD-EPbF
IRG8P50N120KD-EPbF

Overview
  VCES = 1200V IC = 50A, TC =100°C IRG8P50N120KDPbF IRG8P50N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 10µs, TJ(max) = 150°C VCE(ON) typ.
= 1.
7V @ IC = 35A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel GC E GC E IRG8P50N120KDPbF  IRG8P50N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate C Collector E Emitter Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits  High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Parallel Operation Rugged Transient Performance Environmentally friendly Base part number IRG8P50N120KDPbF IRG8P50N120KD-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRG8P50N120KDPbF IRG8P50N120KD-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (see fig.
2) Clamped Inductive Load Current (see fig.
3) Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw Max.
1200 80 50 105 140 45 25 140 ±30 350 140 -40 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Thermal Resistance Parameter RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Mi...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)