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IRG8P60N120KD-EPbF

International Rectifier
Part Number IRG8P60N120KD-EPbF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Mar 8, 2016
Detailed Description   VCES = 1200V IC = 60A, TC =100°C IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast...
Datasheet PDF File IRG8P60N120KD-EPbF PDF File

IRG8P60N120KD-EPbF
IRG8P60N120KD-EPbF

Overview
  VCES = 1200V IC = 60A, TC =100°C IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  tSC 10µs, TJ(max) = 150°C VCE(ON) typ.
= 1.
7V @ IC = 40A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding G E n-channel CE G E GC IRG8P60N120KDPbF  IRG8P60N120KD‐EPbF  TO‐247AC  TO‐247AD  G Gate C Collector E Emitter Features Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits  High Efficiency in a Motor Drive Applications Increases margin for short circuit protection scheme Excellent Current Sharing in Paralle...


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