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IRGP4690D-EPBF

Part Number	IRGP4690D-EPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Mar 8, 2016
Detailed Description	IRGP4690DPbF IRGP4690D-EPbF VCES = 600V IC = 90A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REC...
Datasheet	IRGP4690D-EPBF PDF File

Overview

IRGP4690DPbF IRGP4690D-EPbF VCES = 600V IC = 90A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ.
= 1.
70V @ IC = 75A Applications • Industrial Motor Drive • Inverters • UPS • Welding G E n-channel G Gate GC E TO-247AC IRGP4690DPbF C Collector GC E TO-247AD IRGP4690D-EP E Emitter Features Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGP4690DPbF IRGP4690D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable part number IRGP4690DPbF IRGP4690D-EPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C ICM ILM Continuous Collector Current Pulse Collector Current, VGE = 15V cClamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C IFM Diode Continous Forward Current fDiode Maximum Forward Current VGE Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA Parameter dJunction-to-Case (IGBT) dJunction-to-Case (Diode) Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) Max.
600 140 90 225 300 70 45 300 ±20 ±30 454 227 -55 to +175 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in ...

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IRGP4690D-EPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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