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DF2B6.8M1ACT

Toshiba Semiconductor
Part Number DF2B6.8M1ACT
Manufacturer Toshiba Semiconductor
Description ESD Protection Diodes
Published Mar 8, 2016
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF2B6.8M1ACT DF2B6.8M1ACT 1. Applications • ESD Protection Note: This p...
Datasheet PDF File DF2B6.8M1ACT PDF File

DF2B6.8M1ACT
DF2B6.8M1ACT

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF2B6.
8M1ACT DF2B6.
8M1ACT 1.
Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit 1: Pin 1 2: Pin 2 CST2 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Electrostatic discharge voltage(IEC61000-4-2)(Contact) VESD ±8 kV Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2012-07-03 Rev.
2.
0 DF2B6.
8M1ACT 4.
Electrical Characteristics (Unless otherwise specified, Ta = 25) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance Fig.
4.
1 Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ.
Max Unit Working peak reverse voltage VRWM    5.
0 V Reverse breakdown voltage VBR IBR = 1 mA 6.
0   V Reverse current IR VRWM = 5 V   0.
5 µA Clamp voltage VC (Note 1) IPP = 1 A  12  V Dynamic resistance RDYN (Note 2)   0.
8  Ω Total capacitance Ct (Note 3) VR = 0 V, f = 1 MHz  0.
3 0.
5 pF Note 1: Based on IEC61000-4-5 8/20 µs pulse.
Note 2: TLP parameter : Z0 = 50...


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