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PMEG2020EPAS

NXP
Part Number PMEG2020EPAS
Manufacturer NXP
Description MEGA Schottky barrier rectifier
Published Mar 9, 2016
Detailed Description DFN2020D-3 PMEG2020EPAS 20 V, 2 A low VF MEGA Schottky barrier rectifier 19 January 2015 Product data sheet 1. Gene...
Datasheet PDF File PMEG2020EPAS PDF File

PMEG2020EPAS
PMEG2020EPAS

Overview
DFN2020D-3 PMEG2020EPAS 20 V, 2 A low VF MEGA Schottky barrier rectifier 19 January 2015 Product data sheet 1.
General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
2.
Features and benefits • Average forward current IF(AV) ≤ 2 A • Reverse voltage VR ≤ 20 V • Low forward voltage VF ≤ 420 mV • Low reverse current • Reduced Printed-Circuit-Board (PCB) area requirements • Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity • Leadless small SMD plastic package with visible and solderable side pads • Suitable for Automatic Optical Inspection (AOI) of solder joints • AEC-Q101 qualified 3.
Applications • Low voltage rectification • High efficiency DC-to-DC conversion • Switch Mode Power Supply (SMPS) • Free-wheeling application • Reverse polarity protection • Low power consumption application • Battery chargers for mobile equipment • LED backlight for mobile application 4.
Quick reference data Table 1.
Symbol IF(AV) Quick reference data Parameter average forward current VR reverse voltage Conditions δ = 0.
5; f = 20 kHz; Tamb ≤ 80 °C; square wave δ = 0.
5; f = 20 kHz; Tsp ≤ 140 °C; square wave Tj = 25 °C Min Typ Max Unit [1] - - 2 A - - 2A - - 20 V Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG2020EPAS 20 V, 2 A low VF MEGA Schottky barrier rectifier Symbol VF IR Parameter forward voltage reverse current Conditions IF = 2 A; tp ≤ 300 µs; δ ≤ 0.
02; Tj = 25 °C; pulsed VR = 20 V; tp ≤ 300 µs; δ ≤ 0.
02; Tj = 25 °C; pulsed Min Typ Max Unit - 385 420 mV - 335 1900 µA [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 A ano...


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