DatasheetsPDF.com

FM200CD1D5B

KEC
Part Number FM200CD1D5B
Manufacturer KEC
Description 2-PACK MOSFET MODULE
Published Mar 10, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA 150V / 200A 2-PACK MOSFET MODULE (Common-Drain) FEATURES Low RDS(on) High frequency operati...
Datasheet PDF File FM200CD1D5B PDF File

FM200CD1D5B
FM200CD1D5B

Overview
SEMICONDUCTOR TECHNICAL DATA 150V / 200A 2-PACK MOSFET MODULE (Common-Drain) FEATURES Low RDS(on) High frequency operation dv/dt ruggedness Fast switching APPLICATION Battery Management System Electric Vehicle FM200CD1D5B INTERNAL CIRCUIT 1 2 6 7 3 5 4 1.
D1D2 2.
S2 3.
S1 4.
G1 5.
S1 6.
G2 7.
S2 OUTLINE DRAWING 13+_ 0.
3 13+_ 0.
3 13+_ 0.
3 14 _+ 0.
3 1 23 23+_ 0.
3 23+_ 0.
3 80+_ 0.
5 93+_ 0.
5 6 7 5 4 17+_ 0.
3 Unit : mm 17 _+0.
3 25 _+0.
3 28 _+0.
5 35 _+0.
5 6 _+0.
5 30 _+0.
5 31 _+0.
5 30 _+ 0.
5 22 _+ 0.
5 MAXIMUM RATING (@Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC Drain-to-Source Breakdown Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Isolation Voltage Test @TC=25 @TC=100 @TC=25 , Pulsed AC@1minute Junction Temperature Storage Temperature Weight Mounting Torque (M6) Terminal Connection Torque (M5) SYMBOL VDSS VGSS ID IDM VISO Tj Tstg Weight M M 2013.
7.
24 Revision No : 0 RATING 150 30 340 240 1300 2500 -40 +150 -40 +125 365 5 5 4 UNIT V V A A V g Nm Nm 1/2 FM200CD1D5B ELECTRICAL CHARACTERISTICS (@Tc=25 Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain to Source Leakage Current Gate to Source Leakage Current Drain to Source ON Resistance Dynamic BVDSS Vth IDSS IGSS RDS(ON) ID=250 , VGS=0V VDS=VGS, ID=250 VDS=150V, VGS=0V VGS=20V VGS=-20V VGS=10V, ID=200A Total Gate Charge Gate to Source Charge Gate to Source Charge Turn On Delay Time Rise Time Turn Off Delay Tine Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Qg Qgs Qgd td(on) tr td(off) tr Ciss Coss Crss ID=200A, VDS=75V, VGS=10V VDS=75V, ID=200A, RG=3.
3 VDS=50V, VGS=0V, f=1 Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD ID=200A, VGS=0V trr VR=75V, ID=200A, di/dt = -100A/us Qrr MIN.
TYP.
MAX.
UNIT 150 - - V 3.
0 - 5...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)