DatasheetsPDF.com

JCS2N70VH

JILIN SINO-MICROELECTRONICS
Part Number JCS2N70VH
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Mar 10, 2016
Detailed Description N R N-CHANNEL MOSFET JCS2N70H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-typ    UPS 2A 70...
Datasheet PDF File JCS2N70VH PDF File

JCS2N70VH
JCS2N70VH

Overview
N R N-CHANNEL MOSFET JCS2N70H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （Vgs=10V） Qg-typ    UPS 2A 700 V 6.
5 Ω 8.
0nC APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS   Crss ( 5pF)    dv/dt RoHS FEATURES Low gate charge Low Crss (typical 5pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product TO-126F ORDER MESSAGE Order codes Marking Package JCS2N70MFH-O-MF-N-B JCS2N70VH-O-V-N-B JCS2N70RH-O-R-N-B JCS2N70RH-O-R-N-A JCS2N70CH-O-C-N-B JCS2N70FH-O-F-N-B JCS2N70MFH JCS2N70VH JCS2N70RH JCS2N70RH JCS2N70CH JCS2N70FH TO-126F IPAK DPAK DPAK TO-220C TO-220MF Halogen Free NO NO NO NO NO NO Packaging Tube Tube Tube Brede Tube Tube Device Weight 1.
50 g(typ) 0.
35 g(typ) 0.
30 g(typ) 0.
30 g(typ) 2.
15 g(typ) 2.
20 g(typ) ：201510D 1/13 R JCS2N70H ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol Value JCS2N70VH/RH/MFH JCS2N70CH JCS2N70FH － Drain-Source Voltage VDSS 700 700 700 Drain Current -continuous ID T=25℃ T=100℃ 2 1.
3 2 2* 1.
3 1.
3* （ 1） Drain Current - pulse （note 1） IDM 8 8* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EAS 120 （ 1） Avalanche Current（note 1） IAR 1.
9 （ 1） Repetitive Avalanche Current EAR （note 1） 4.
4 （ 3） Peak Diode Recovery dv/dt dv/dt 4.
5 （note 3） Power Dissipation PD TC=25℃ -Derate above 25℃ 44 0.
35 54 23 0.
43 0.
18 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 **Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201510D 2/13 R ELECTRICAL CHARACTERISTICS JCS2N70H Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V 700 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 0.
73 - V/℃ Zero Gat...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)