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JCS10N70CH

JILIN SINO-MICROELECTRONICS
Part Number JCS10N70CH
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Mar 10, 2016
Detailed Description N R N-CHANNEL MOSFET JCS10N70H MAIN CHARACTERISTICS Package ID 10A VDSS 700 V Rdson（@Vgs=10V） 1.10 Ω Qg 55.0nC z...
Datasheet PDF File JCS10N70CH PDF File

JCS10N70CH
JCS10N70CH

Overview
N R N-CHANNEL MOSFET JCS10N70H MAIN CHARACTERISTICS Package ID 10A VDSS 700 V Rdson（@Vgs=10V） 1.
10 Ω Qg 55.
0nC z z z UPS APPLICATIONS z High frequency switch mode power supply z Electronic ballasts z UPS        z z Crss ( 10pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 10pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS10N70CH JCS10N70FH Marking JCS10N70CH JCS10N70FH Package TO-220C TO-220MF Halogen Free NO NO Packaging Tube Tube Device Weight 2.
15 g(typ) 2.
20 g(typ) ：201406D 1/10 R ABSOLUTE RATINGS (Tc=25℃) JCS10N70H Parameter － Drain-Source Voltage Drain Current -continuous （ 1） Drain Current - pulse （note 1） Gate-Source Voltage （ 2） Single Pulsed Avalanche Energy（note 2） （ 1） Avalanche Current（note 1） （ 1） Repetitive Avalanche Energy（note 1） Symbol VDSS ID T=25℃ T=100℃ IDM VGSS EAS IAR EAR Value JCS10N70CH JCS10N70FH 700 700 10 10* 6.
3 6.
3* 40 40* ±30 338 10 23.
9 （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 5 Power Dissipation PD TC=25℃ -Derate above 25℃ 245 2.
0 80 2.
16 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering Purposes TL 300 * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201406D 2/10 R ELECTRICAL CHARACTERISTICS JCS10N70H Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V 700 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 1.
00 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=700V,VGS=0V, TC=25℃ VDS=560V, TC=125℃ - - 10 μA - - 100 μA Gate-body leakage current, Forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, Reverse IGSSR VDS=0V, VGS =-30V - - -100 nA On-Characteristics Gate Threshold Voltage VGS(th) VDS = VGS ,...


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