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JCS6N90CH

JILIN SINO-MICROELECTRONICS
Part Number JCS6N90CH
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Mar 10, 2016
Detailed Description N R N-CHANNEL MOSFET JCS6N90H MAIN ID VDSS Rdson-max （@Vgs=10V） Qg-typ CHARACTERISTICS 6A 900 V 3.0 Ω 14 nC Packag...
Datasheet PDF File JCS6N90CH PDF File

JCS6N90CH
JCS6N90CH

Overview
N R N-CHANNEL MOSFET JCS6N90H MAIN ID VDSS Rdson-max （@Vgs=10V） Qg-typ CHARACTERISTICS 6A 900 V 3.
0 Ω 14 nC Package z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 9pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 9pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product TO-262 ORDER MESSAGE Order codes Marking JCS6N90CH-O-C-N-B JCS6N90FH-O-F-N-B JCS6N90BH-O-B-N-B JCS6N90CH JCS6N90FH JCS6N90BH Package TO-220C TO-220MF TO-262 Halogen Free NO NO NO Packaging Tube Tube Tube Device Weight 2.
15 g(typ) 2.
20 g(typ) 1.
71 g(typ) ：201510C 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS6N90H Parameter Symbol Value JCS6N90CH/BH JCS6N90FH － Drain-Source Voltage VDSS 900 Drain Current -continuous ID T=25℃ T=100℃ 6 3.
8 6* 3.
8* （ 1） Drain Current - pulse （note 1） IDM 24 24* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EAS 650 （ 1） Avalanche Current（note 1） IAR 6 （ 1） Repetitive Avalanche Current EAR （note 1） 16.
7 （ 3） Peak Diode Recovery dv/dt dv/dt 4.
5 （note 3） Power Dissipation PD TC=25℃ -Derate above 25℃ 167 1.
43 58 0.
48 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature TL for Soldering Purposes 300 * *Drain current limited by maximum junction temperature Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201510C 2/11 R ELECTRICAL CHARACTERISTICS JCS6N90H Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V 900 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ - 1.
05 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=900V,VGS=0V, TC=25℃ VDS=720V, TC=125℃ - - 1 μA - - 10 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V - - 100 nA Gate-body leakage current, rev...


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