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JCS50N06FH

JILIN SINO-MICROELECTRONICS
Part Number JCS50N06FH
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Mar 11, 2016
Detailed Description N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 3...
Datasheet PDF File JCS50N06FH PDF File

JCS50N06FH
JCS50N06FH

Overview
N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATIONS  High frequency switch mode power supplies  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS50N06CH-O-C-N-B JCS50N06FH-O-F-N-B JCS50N06VH-O-V-N-B JCS50N06RH-O-R-N-B JCS50N06RH-O-R-N-A JCS50N06CH JCS50N06FH JCS50N06VH JCS50N06RH JCS50N06RH Package TO-220C TO-220MF IPAK DPAK DPAK Halogen Free NO NO NO NO NO Packaging Tube Tube Tube Tube Reel Device Weight 2.
06 g(typ) 2.
22 g(typ) 0.
35 g(typ) 0.
35 g(typ) 0.
35 g(typ) ：201510D 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS50N06H Parameter Value Symbol JCS50N06RH/VH JCS50N06CH JCS50N06FH Unit － Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse（note 1） IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy （note 2） EAS ( 1) Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Energy（note EAR 1） 60 50 31.
7 200* ±20 500 50 8.
75 10.
3 50* 31.
7* V A A A V mJ A 5.
6 mJ ( 3) dv/dt Peak Diode Recovery dv/d（t note 3） 7.
0 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ 87.
5 0.
70 Operating and Storage Temperature TJ，TSTG Range Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 103.
8 0.
83 -55～+150 300 56 W 0.
45 W/℃ ℃ ℃ ：201510D 2/11 R ELECTRICAL CHARACTERISTICS JCS50N06H Parameter Off –Characteristics － Drain-Source Voltage Breakdown Voltage Temperature Coefficient Symbol Tests conditions BVDSS ID=250μA, VGS=0V ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ Min Typ Max Units 60 - - V - 0.
6 - V/℃ Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V, TC=25℃ VDS=48V, TC=125℃ - - 1 μA - 10 μA Gate-body leakage current, forward IGSSF VDS=0...


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