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JCS540BT

JILIN SINO-MICROELECTRONICS
Part Number JCS540BT
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Mar 11, 2016
Detailed Description N R N-CHANNEL MOSFET JCS540T MAIN CHARACTERISTICS Package ID 33 A VDSS 100 V Rdson（@Vgs=10V） 44 mΩ Qg 37.0 nC z ...
Datasheet PDF File JCS540BT PDF File

JCS540BT
JCS540BT


Overview
N R N-CHANNEL MOSFET JCS540T MAIN CHARACTERISTICS Package ID 33 A VDSS 100 V Rdson（@Vgs=10V） 44 mΩ Qg 37.
0 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 71pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 71pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS540CT-O-C-N-B JCS540FT-O-F-N-B JCS540BT-O-B-N-B JCS540ST-O-S-N-B JCS540ST-O-S-N-B JCS540WT-O-W-N-B Marking JCS540CT JCS540FT JCS540BT JCS540ST JCS540ST JCS540WT Package TO-220C TO-220MF TO-262 TO-263 TO-263 TO-247 Halogen Free NO NO NO NO NO NO Packaging Tube Tube Tube Tube Reel Tube Device Weight 2.
15 g(typ) 2.
20 g(typ) 1.
71 g(typ) 1.
37 g(typ) 1.
37 g(typ) 5.
20 g(typ) ：201505C 1/13 R JCS540T ABSOLUTE RATINGS (Tc=25℃) Parameter Symbol － Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ （ 1） Drain Current - pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy（note 2） EAS （ 1） Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Current（note 1） EAR Value JCS540CT/BT JCS540FT /ST/WT 100 100 33 33* 23 23* 132 132* ±30 800 33 13 （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt 5.
9 Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 130 40 0.
87 0.
27 -55～+150 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201505C 2/13 R JCS540T ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V, TC=25℃ VDS=80V, TC=125℃ Gate-body leakage current, forward IGSSF...


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