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JCS80N10CF

JILIN SINO-MICROELECTRONICS
Part Number JCS80N10CF
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Mar 11, 2016
Detailed Description N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z ...
Datasheet PDF File JCS80N10CF PDF File

JCS80N10CF
JCS80N10CF

Overview
N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS z High efficiency switching DC/DC converters and switch mode power supply z DC Motor control and Class D Amplifier z z Crss z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS80N10CF-O-C-N-B JCS80N10FF-O-F-N-B JCS80N10SF-O-S-N-A JCS80N10SF-O-S-N-B JCS80N10WF-O-W-N-B Marking JCS80N10CF JCS80N10FF JCS80N10SF JCS80N10SF JCS80N10WF Package TO-220C TO-220MF TO-263 TO-263 TO-247 Halogen Free Packaging NO NO NO NO NO Tube Tube Reel Tube Tube Device Weight 2.
15 g(typ) 2.
2 g(typ) 1.
37 g(typ) 1.
37 g(typ) 5.
2 g(typ) ：201412A 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS80N10F Parameter Symbol － Drain-Source Voltage VDSSB B Drain Current-continuous IDB T=25℃ B T=100℃ （ 1） Drain Current – pulse（note 1） IDMB B Gate-Source Voltage VGSSB B （ 2） Single Pulsed Avalanche Energy（note 2） EASB B （ 1） Avalanche Current(note 1) IARB B （ 1） Repetitive Avalanche Energy （note 1） EARB B （ 3） Peak Diode Recovery Dv/dt （note 3） dv/dt Power Dissipation P T =25D CB B B B ℃ -Derate above 25℃ Operating and StorageTemperature Range T ，TJ STGB B BB Maximum LeadTemperature for Soldering Purposes TLB B * *Drain current limited by maximum junction temperature Value JCS80N10C JCS80N F/SF/WF 10FF 100 80 38 66 27 320 152 ±20 1500 55 25.
4 9.
0 254 35.
8 1.
69 0.
24 -55～+175 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ ：201412A 2/11 R JCS80N10F ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Min Typ Max Units Off –Characteristics － Drain-Source Voltage BVDSSB B IBDB=250μA, VBGSB=0V 100 - - V Breakdown Voltage Temperature Coefficient ΔBVBDSSB/Δ TJB B IBDB=1mA, referenced to 25℃ - 0.
13 - V/℃ Zero Gate Voltage Drain Current IDS...


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