DatasheetsPDF.com

JCS65N20ABT

JILIN SINO-MICROELECTRONICS
Part Number JCS65N20ABT
Manufacturer JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Published Mar 11, 2016
Detailed Description N R N-CHANNEL MOSFET JCS65N20ABT MAIN CHARACTERISTICS Package ID 65A VDSS 200 V Rdson(@Vgs=10V) 25mΩ Qg 120nc  ...
Datasheet PDF File JCS65N20ABT PDF File

JCS65N20ABT
JCS65N20ABT


Overview
N R N-CHANNEL MOSFET JCS65N20ABT MAIN CHARACTERISTICS Package ID 65A VDSS 200 V Rdson(@Vgs=10V) 25mΩ Qg 120nc   UPS APPLICATIONS  High frequency switch mode power supplies  Electronic lamp ballasts  based on half bridge  UPS   Crss    dv/dt RoHS FEATURES Low gate charge Low Crss Fast switching 100% avalanche tested Improved dv/dt capability RoHS product ORDER MESSAGE Order codes Marking JCS65N20ABT-O-AB-N-B JCS65N20ABT Package TO-3PB Halogen Free NO Packaging Tube Device Weight 5.
73g (typ) :201503A 1/8 R ABSOLUTE RATINGS (Tc=25℃) JCS65N20ABT Parameter Symbol - Drain-Source Voltage VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current – pulse(note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy (note 2) EAS ( 1) Avalanche Current(note 1) IAR ( 1) Repetitive Avalanche Energy(note 1) EAR Value JCS65N20ABT 200 65 37 260 ±30 1225 65 27.
7 ( 3) dv/dt Peak Diode Recovery dv/dt(note 3) 5.
4 Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature TJ,TSTG Range Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature 277 2.
22 -55~+150 300 Unit V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ :201503A 2/8 R ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient BVDSS ID=250μA, VGS=0V ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃ Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V, TC=25℃ VDS=160V, TC=125℃ Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage IGSSR VDS=0V, VGS =-30V VGS(th) VDS = VGS , ID=250μA Static Drain-Source RDS(ON) On-Resistance Forward Transconductance gfs Dynamic Characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance C...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)