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STB80NF55-06T

STMicroelectronics
Part Number STB80NF55-06T
Manufacturer STMicroelectronics
Description N-CHANNEL POWER MOSFET
Published Mar 12, 2016
Detailed Description STB80NF55-06T Datasheet Automotive-grade N-channel 55 V, 5 mΩ typ., 80 A, STripFET™ II Power MOSFET in a D²PAK package ...
Datasheet PDF File STB80NF55-06T PDF File

STB80NF55-06T
STB80NF55-06T


Overview
STB80NF55-06T Datasheet Automotive-grade N-channel 55 V, 5 mΩ typ.
, 80 A, STripFET™ II Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475v1_noZen Features Type STB80NF55-06T VDSS 55 V RDS(on) max.
6.
5 mΩ ID 80 A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge.
This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Product status link STB80NF55-06T Product summary Order code STB80NF55-06T Marking B80NF55-06T Package D²PAK Packing Tape and reel DS8852 - Rev 2 - September 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C P1 Long term load test (ID= 100 A, VDS= 1.
5 V, tpulse=10 ms) ΔVSD (tested) P2 (3) Short term load test (ID= 75 A, VDS= 15 V, tpulse=700 μs) ΔVSD (not tested) EAS(4) Single-pulse avalanche energy dv/dt(5) Peak diode recovery voltage slope Tstg Storage temperature range Tj Operating junction temperature range 1.
Current limited by package.
2.
Pulse width limited by safe operating area.
3.
Defined by design, not subject to production test.
4.
Starting TJ = 25 °C, ID = 30 A, VDD = 30 V 5.
ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX Table 2.
Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-pcb(1) Thermal re...


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