DatasheetsPDF.com

STPS20SM120S

STMicroelectronics
Part Number STPS20SM120S
Manufacturer STMicroelectronics
Description Power Schottky rectifier
Published Mar 12, 2016
Detailed Description $ . $ . 72)3$% . $ . $ $ 72$% . $ . ,ð3$. $ . $ $ . 72$% $ QDUURZOHDGV Features • High current cap...
Datasheet PDF File STPS20SM120S PDF File

STPS20SM120S
STPS20SM120S


Overview
$ .
$ .
72)3$% .
$ .
$ $ 72$% .
$ .
,ð3$.
$ .
$ $ .
72$% $ QDUURZOHDGV Features • High current capability • Avalanche rated • Low forward voltage drop • High frequency operation • Insulated package TO220FP-AB: – Insulated voltage: 2000 VRMS sine • ECOPACK®2 compliant component on TO-220AB and TO-220FPAB.
STPS20SM120S Power Schottky rectifier Datasheet - production data Description This Schottky diode is suited for high frequency switch mode power supply.
Packaged in TO-220AB narrow leads, TO-220AB, TO-220FPAB and I2PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load.
Table 1.
Device summary Symbol Value IF(AV) VRRM Tj VF (typ) 20 A 120 V 150 °C 0.
49 V Figure 1.
Electrical characteristics(a) VI "Forward" I 2 x IO X VRRM VAR VR IF IO IR X V "Reverse" VTo VF(Io) VF VF(2xIo) IAR November 2014 This is information on a product in full production.
a.
VARM and IARM must respect the reverse safe operating area defined in Figure 9.
VAR and IAR are pulse measurements (tp < 10 µs).
VR, IR, VRRM and VF, are static characteristics DocID022921 Rev 2 1/14 www.
st.
com Characteristics 1 Characteristics STPS20SM120S Table 2.
Absolute ratings (limiting values with terminals 1 and 3 short circuited at Tamb = 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current IFSM PARM(1) VARM(2) VASM(2) Surge non repetitive forward current Repetitive peak avalanche power Maximum repetitive peak avalanche voltage Maximum single-pulse peak avalanche voltage Tstg Storage temperature range Tj Maximum operating junction temperature(3) tp = 10 ms sine-wave Tj = 125 °C, tp = 10 µs tp < 10 µs, Tj < 125 °C, IAR < 6A tp < 10 µs, Tj < 125 °C, IAR < 6A 120 50 20 220 900 150 150 -65 to +175 150 V A A A W V V °C °C 1.
For pulse time duration...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)