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STD28P3LLH6AG

STMicroelectronics
Part Number STD28P3LLH6AG
Manufacturer STMicroelectronics
Description P-channel Power MOSFET
Published Mar 13, 2016
Detailed Description STD28P3LLH6AG Automotive-grade P-channel -30 V, 0.027 Ω typ., -12 A STripFET™ H6 Power MOSFET in a DPAK package Datashe...
Datasheet PDF File STD28P3LLH6AG PDF File

STD28P3LLH6AG
STD28P3LLH6AG

Overview
STD28P3LLH6AG Automotive-grade P-channel -30 V, 0.
027 Ω typ.
, -12 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS STD28P3LLH6AG -30V RDS(on) max.
0.
030Ω ID PTOT -12A 33W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM11258v1  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Logic level Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STD28P3LLH6AG Table 1: Device summary Marking Package 28P3LLH6 DPAK Packing Tape and reel September 2015 DocID028397 Rev 1 This is information on a product in full production.
1/15 www.
st.
com Contents Contents STD28P3LLH6AG 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 8 4 Package information .
9 4.
1 DPAK (TO-252) type A package information.
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9 4.
2 DPAK (TO-252) packing information.
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12 5 Revision history .
14 2/15 DocID028397 Rev 1 STD28P3LLH6AG 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VDS VGS ID(1) IDM(2) PTOT EAS(3) Tstg Tj Drain-source voltage Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuo...


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