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STD46N6F7

STMicroelectronics
Part Number STD46N6F7
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 13, 2016
Detailed Description STD46N6F7 N-channel 60 V, 0.012 Ω typ., 15 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data F...
Datasheet PDF File STD46N6F7 PDF File

STD46N6F7
STD46N6F7

Overview
STD46N6F7 N-channel 60 V, 0.
012 Ω typ.
, 15 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code STD46N6F7 VDS 60 V RDS(on) max.
0.
014 Ω ID 15 A Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STD46N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 46N6F7 DPAK Packaging Tape and reel January 2016 DocID028323 Rev 2 This is information on a product in full production.
1/14 www.
st.
com Contents Contents STD46N6F7 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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5 3 Test circuits 7 4 Package information .
8 4.
1 DPAK(TO-252) type A package information .
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8 4.
2 Packing information.
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11 5 Revision history .
13 2/14 DocID028323 Rev 2 STD46N6F7 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VDS VGS ID(1) ID(1) IDM(1)(2) PTOT(1) Tj Tstg Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C...


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