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STL8N6LF6AG

STMicroelectronics
Part Number STL8N6LF6AG
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 13, 2016
Detailed Description STL8N6LF6AG Automotive-grade N-channel 60 V, 21 mΩ typ., 32 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Dat...
Datasheet PDF File STL8N6LF6AG PDF File

STL8N6LF6AG
STL8N6LF6AG

Overview
STL8N6LF6AG Automotive-grade N-channel 60 V, 21 mΩ typ.
, 32 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max.
ID PTOT STL8N6LF6AG 60 V 27 mΩ 32 A 55 W  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Wettable flank package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STL8N6LF6AG Table 1: Device summary Marking Package 8N6LF6 PowerFLAT™ 5x6 Packing Tape and reel January 2016 DocID028068 Rev 2 This is information on a product in full production.
1/14 www.
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com Contents Contents STL8N6LF6AG 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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5 3 Test circuits 7 4 Package information .
8 4.
1 PowerFLAT™ 5x6 WF type R package information.
8 4.
2 PowerFLAT™ 5x6 WF packing information .
11 5 Revision history .
13 2/14 DocID028068 Rev 2 STL8N6LF6AG 1 Electrical ratings Symbol VDS VGS ID ID(1) IDM(1)(2) IDM(2) PTOT PTOT Tstg Tj Table 2: Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Dr...


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