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SiHF18N50C

Vishay
Part Number SiHF18N50C
Manufacturer Vishay
Description Power MOSFET
Published Mar 13, 2016
Detailed Description SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs...
Datasheet PDF File SiHF18N50C PDF File

SiHF18N50C
SiHF18N50C

Overview
SiHP18N50C, SiHF18N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.
RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 76 21 29 Single TO-220 TO-220 FULLPAK 0.
225 D FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV/dt Ruggedness • Improved trr/Qrr • Improved Gate Charge • High Power Dissipations Capability • Compliant to RoHS Directive 2002/95/EC G S D G GDS ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET TO-220 SiHP18N50C-E3 TO-220 FULLPAK SiHF18N50C-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb VGS at 10 V TC = 25 °C TC = 100 °C VGS ID IDM Linear Derating Factor TO-220 FULLPAK Single Pulse Avalanche Energyc EAS Maximum Power Dissipation TO-220 FULLPAK PD Peak Diode Recovery dV/dtd dV/dt Operating Junction a...


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