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STTH16R04C

Part Number	STTH16R04C
Manufacturer	STMicroelectronics
Description	Ultrafast recovery diode
Published	Mar 14, 2016
Detailed Description	STTH16R04C Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2X8A 400 V 175° C ...
Datasheet	STTH16R04C PDF File

Overview

STTH16R04C Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2X8A 400 V 175° C 0.
9 V 25 ns Features and benefits ■ Very low switching losses ■ High frequency and/or high pulsed current operation ■ High junction temperature ■ Insulated package: – TO-220FPAB Electrical insulation = 1500 VRMS Capacitance = 12 pF Description The STTH16R04C series uses ST's new 400 V planar Pt doping technology.
The STTH16R04C is specially suited for switching mode base drive and transistor circuits.
Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.
A1 A2 K A2 K A1 TO-220AB STTH16R04CT A2 A1 K TO-220FPAB STTH16R04CFP K A2 A1 D2PAK STTH16R04CG Order codes Part Number STTH16R04CT STTH16R04CG STTH16R04CG-TR STTH16R04CFP Marking STTH16R04CT STTH16R04CG STTH16R04CG STTH16R04CFP March 2007 Rev 1 1/10 www.
st.
com Characteristics 1 Characteristics STTH16R04C Table 1.
Absolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.
5 TO-220AB / D2PAK Per diode Tc = 150° C Per device Tc = 145° C TO-220FPAB Per diode Tc = 125° C Per device Tc = 90° C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature range 400 30 8 16 8 16 120 -65 to +175 -40 to +175 V A A A °C °C Table 2.
Thermal parameters Symbol Rth(j-c) Junction to case Rth(c) Coupling Parameter TO-220AC / D2PAK TO-220FPAB TO-220AC / D2PAK TO-220FPAB Per diode Per device Per diode per device Per device per device Value 2 1.
15 4.
6 3.
8 0.
3 3 Unit °C/W °C/W When the diodes are used simultaneously: ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 2/10 STTH16R04C Characteristics Table 3.
Static electrical chara...

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